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| Home > Embedded OEM > DRAM > DDR2 |
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| DRAM DDR2 |
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DDR2 has been the standard memory solutions for applications in virtually all market segments from Servers, PCs and Notebooks to Printers, Networking and Storage systems and many more for several years providing superior cost and performance criteria. DDR2 has started to relinquish its role as the memory industry’s mainstream technology to DDR3 and is forecasted to become a legacy product by early 2011
Available in power supply voltages of 1.8V (and 1.55V for FBDIMMs) and with transfer data rates from 400Mb/s to 800Mb/s and beyond, DDR2 has been designed in a wide range of applications providing designers with numerous module options to choose from. Wintec offers a wide range of DDR2 Module solutions. Please click on the link to find out more about our solutions. |
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| DDR2 - 240-Pin DIMM - Registered ECC |
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| Standard Profile (1.181”) with Nominal Voltage (1.8V) |
| Density |
Part Number |
Rank |
DIMM
Config |
Component
Config |
Voltage |
| 1GB |
WD2RE01GX809-xxxx-yyz |
1 rank |
128x72 |
128Mx8 |
1.8V |
| WD2RE01GX418-xxxx-yyz |
1 rank |
128x72 |
128Mx4 |
1.8V |
| 2GB |
WD2RE02GX818-xxxx-yyz |
2 rank |
256x72 |
128Mx8 |
1.8V |
| 4GB |
WD2RE04GX418-xxxx-yyz |
1 rank |
512x72 |
512Mx4 |
1.8V |
| WD2RE04GX436-xxxx-yyz |
2 rank |
512x72 |
256Mx4 |
1.8V |
| WD2RE04GX836-xxxx-yyz |
4 rank |
512x72 |
128Mx8 |
1.8V |
| 8GB |
WD2RE08GX436-xxxx-yyz |
2 rank |
1024x72 |
512Mx4 |
1.8V |
| WD2RE08GX836-xxxx-yyz |
4 rank |
1024x72 |
256Mx8 |
1.8V |
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| Very Low Profile (0.72”) with Nominal Voltage (1.8V) |
| Density |
Part Number |
Rank |
DIMM
Config |
Component
Config |
Voltage |
| 1GB |
WD2RE01GX809V-xxxx-yyz |
1 rank |
128x72 |
128Mx8 |
1.8V |
| WD2RE01GX418V-xxxx-yyz |
1 rank |
128x72 |
128Mx4 |
1.8V |
| 2GB |
WD2RE02GX818V-xxxx-yyz |
2 rank |
256x72 |
128Mx8 |
1.8V |
| 4GB |
WD2RE04GX418V-xxxx-yyz |
1 rank |
512x72 |
512Mx4 |
1.8V |
| WD2RE04GX818V-xxxx-yyz |
2 rank |
512x72 |
256Mx8 |
1.8V |
| 8GB |
WD2RE08GX818V-xxxxx-yyz |
2 rank |
1024x72 |
512Mx8 |
1.8V |
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(xxxxx) =
(yy) =
(z) = |
Modules Speed (MHz) and CAS Latency
800I: 800MHz CL6
800G : 800MHz CL5
667G : 667MHz CL5
533E : 533MHz CL4
DRAM Manufacturer and Die Revision
P: Samsung
H: Micron
C: Hynix |
A: A-Die
B: B-Die
C: C-Die |
Buffer / Register set (Only applies to Registered/Buffered modules)
I: Inphi
D: IDT
L: Intel |
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