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| Home > Embedded OEM > DRAM > DDR3 |
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| DRAM DDR3 |
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DDR3 is the current mainstream dram technology standardized by JEDEC, bringing further improvements in power consumption and increased bandwidth over DDR2. Available in power supply voltages of 1.5V (DDR3) and 1.35V (DDR3L) and with transfer data rates from 800Mb/s to 1.6Gb/s and beyond, DDR3 has become the de facto mainstream memory technology especially for server and notebook applications in the 1H of 2010. Many other applications are available in the market today to take advantage of the superior performance features of DDR3 and DDR3L. Wintec currently offers following DDR3 and DDR3L Modules and will continue to add more solutions as DDR3/DDR3L enabled applications will proliferate. |
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| DDR3 240-Pin Registered-ECC DIMMs |
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| Standard Profile (1.181”) with Nominal Voltage (1.5V) |
| Density |
Part Number |
Rank |
DIMM
Config |
Component
Config |
Voltage |
| 1GB |
WD3RE01GX809-xxxxx-yyz |
1 rank |
128x72 |
128Mx8 |
1.5V |
| 2GB |
WD3RE02GX818-xxxxx-yyz |
2 rank |
256x72 |
128Mx8 |
1.5V |
| WD3RE02GX809-xxxxx-yyz |
1 rank |
256x72 |
256Mx8 |
1.5V |
| WD3RE02GX418-xxxxx-yyz |
1 rank |
256x72 |
256Mx4 |
1.5V |
| 4GB |
WD3RE04GX418-xxxxx-yyz |
1 rank |
512x72 |
512Mx4 |
1.5V |
| WD3RE04GX818-xxxxx-yyz |
2 rank |
512x72 |
256Mx8 |
1.5V |
| WD3RE04GX436-xxxxx-yyz |
2 rank |
512x72 |
256Mx4 |
1.5V |
| 8GB |
WD3RE08GX436-xxxxx-yyz |
2 rank |
1024x72 |
512Mx4 |
1.5V |
| WD3RE08GX836-xxxxx-yyz |
4 rank |
1024x72 |
256Mx8 |
1.5V |
| WD3RE08GX418-xxxxx-yyz |
1 rank |
1024x72 |
1024Mx4 |
1.5V |
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| Very Low Profile (0.72”) with Nominal Voltage (1.5V) |
| Density |
Part Number |
Rank |
DIMM
Config |
Component
Config |
Voltage |
| 1GB |
WD3RE01GX809V-xxxxx-yyz |
1 rank |
128x72 |
128Mx8 |
1.5V |
| 2GB |
WD3RE02GX818V-xxxxx-yyz |
2 rank |
256x72 |
128Mx8 |
1.5V |
| WD3RE02GX809V-xxxxx-yyz |
1 rank |
256x72 |
256Mx8 |
1.5V |
| WD3RE02GX418V-xxxxx-yyz |
1 rank |
256x72 |
256Mx4 |
1.5V |
| 4GB |
WD3RE04GX418V-xxxxx-yyz |
1 rank |
512x72 |
512Mx4 |
1.5V |
| WD3RE04GX818V-xxxxx-yyz |
2 rank |
512x72 |
256Mx8 |
1.5V |
| 8GB |
WD3RE08GX418V-xxxxx-yyz |
1 rank |
1024x72 |
1024Mx4 |
1.5V |
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| Standard Profile (1.181”) with Low Voltage (1.35V) |
| Density |
Part Number |
Rank |
DIMM
Config |
Component
Config |
Voltage |
| 1GB |
WD3LE01GX809-xxxxx-yyz |
1 rank |
128x72 |
128Mx8 |
1.35V |
| 2GB |
WD3LE02GX818-xxxxx-yyz |
2 rank |
256x72 |
128Mx8 |
1.35V |
| WD3LE02GX809-xxxxx-yyz |
1 rank |
256x72 |
256Mx8 |
1.35V |
| WD3LE02GX418-xxxxx-yyz |
1 rank |
256x72 |
256Mx4 |
1.35V |
| 4GB |
WD3LE04GX418-xxxxx-yyz |
1 rank |
512x72 |
512Mx4 |
1.35V |
| WD3LE04GX818-xxxxx-yyz |
2 rank |
512x72 |
256Mx4 |
1.35V |
| WD3LE04GX436-xxxxx-yyz |
2 rank |
512x72 |
256Mx4 |
1.35V |
| 8GB |
WD3LE08GX436-xxxxx-yyz |
2 rank |
1024x72 |
512Mx4 |
1.35V |
| WD3LE08GX836-xxxxx-yyz |
4 rank |
1024x72 |
256Mx8 |
1.35V |
| WD3LE08GX418-xxxxx-yyz |
1 rank |
1024x72 |
1024Mx4 |
1.35V |
|
| Very Low Profile (0.72”) with Low Voltage (1.35V) |
| Density |
Part Number |
Rank |
DIMM
Config |
Component
Config |
Voltage |
| 1GB |
WD3LE01GX809V-xxxxx-yyz |
1 rank |
128x72 |
128Mx8 |
1.35V |
| 2GB |
WD3LE02GX818V-xxxxx-yyz |
2 rank |
256x72 |
128Mx8 |
1.35V |
| WD3LE02GX809V-xxxxx-yyz |
1 rank |
256x72 |
256Mx8 |
1.35V |
| WD3LE02GX418V-xxxxx-yyz |
1 rank |
256x72 |
256Mx4 |
1.35V |
| 4GB |
WD3LE04GX418V-xxxxx-yyz |
1 rank |
512x72 |
512Mx4 |
1.35V |
| WD3LE04GX418V-xxxxx-yyz |
2 rank |
512x72 |
256Mx4 |
1.35V |
| 8GB |
WD3LE08GX418V-xxxxx-yyz |
1 rank |
1024x72 |
1024Mx4 |
1.35V |
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(xxxxx) =
(yy) =
(z) = |
Module speed (MHz) and Cas Latency
1066J : 1066MHz CL 7
1333L : 1333Mhz CL9
1600N :1600MHz CL11
DRAM Manufacturer and Die Revision
P: Samsung
H: Micron
C: Hynix |
A: A-Die
B: B-Die
C: C-Die |
Buffer / Register set (Only applies to Registered/Buffered modules)
I: Inphi
D: IDT
L: Intel |
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