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Specialty
32 Bit DIMM
32 Bit DIMM
 
DDR has provided an evolutionary path from Synchronous DRAM (or SDR). It is the first DRAM technology to transfer data on both the rising and falling edge of the clock. JEDEC standardized DDR technology with a power supply voltage of 2.5V for transfer data rates from 266mb/s to 333Mb/s and 2.6V for 400Mb/s. DDR has been widely adopted and remains designed in a variety of applications especially for ones with longer life cycles and upgrade requirements like Servers and Networking systems.
 
 
DDR2 - 144-Pin DIMM - Unbuffered 32-Bit
Standard Profile (1.18”) with Nominal Voltage (1.8V)
Density Part Number Rank DIMM
Config
Component
Config
Voltage
512MB WD2HN512X804-xxxx-yy 1 Rank 64x64 128Mx8 1.8V
WD2HN512X808-xxxx-yy 2 Rank 64x64 64Mx8 1.8V
1GB WD2HN01GX808-xxxx-yy 2 Rank 128x64 128Mx8 1.8V
DDR - 100-Pin DIMM - Unbuffered 32-Bit
Standard Profile (1.2”) with Nominal Voltage (2.5V)
Density Part Number Rank DIMM
Config
Component Config Voltage
128MB WD1HN128X804-xxxx-yy 1 rank 16x8 32Mx8 2.5V
256MB WD1HN256X804-xxxx-yy 1 Rank 32x8 64Mx8 2.5V
512MB WD1HN512X808-xxxx-yy 2-Rank 64x8 64Mx8 2.5V
SDR - 100-Pin DIMM - Unbuffered 32-Bit
Standard Profile (1.25”) with Nominal Voltage (3.3V)
Density Part Number Rank DIMM
Config
Component Config Voltage
128MB WSDHN128X808-xxxx-yy 2 rank 16x8 16Mx8 3.3V
256MB WSDHN256X808-xxxx-yy 2 Rank 32x8 32Mx8 3.3V
 
(xxxx) =




(yy) =
Module speed (MHz) and Cas Latency
266A: 266Mhz CL2
333B: 333Mhz CL2.5
400C: 400Mhz CL3

DRAM Manufacturer and Die Revision
P: Samsung
H: Micron
C: Hynix     
A: A-Die
B: B-Die
C: C-Die
(z) = Buffer / Register set (Only applies to Registered/Buffered modules)
I: Inphi
D: IDT/ICS
L: Intel
 
 
 
 
 
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